PART |
Description |
Maker |
AS7C34096A AS7C34096A-20TIN AS7C34096A-10JC AS7C34 |
SRAM - 3.3V Fast Asynchronous DUAL MONOSTABLE MULTIVIBRATORS 16-SOIC -40 to 85 DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO36 DUAL MONOSTABLE MULTIVIBRATORS 16-TSSOP -40 to 85 512K X 8 STANDARD SRAM, 20 ns, PDSO44 DUAL MONOSTABLE MULTIVIBRATORS 16-TVSOP -40 to 85 512K X 8 STANDARD SRAM, 12 ns, PDSO44 DUAL MONOSTABLE MULTIVIBRATORS 16-SO -40 to 85 512K X 8 STANDARD SRAM, 15 ns, PDSO44 3.3V 512K x 8 CMOS SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. ALLIANCE MEMORY INC
|
AS7C33512FT32_36A AS7C33512FT32_36A.V1.4 AS7C33512 |
3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 512K x 32/36 Flow-through synchronous SRAM 512K X 36 STANDARD SRAM, 7.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/AMMO DIODE ZENER SINGLE 1000mW 27Vz 9.5mA-Izt 0.05 5uA-Ir 20.6Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36 TRANS NPN W/RES 80 HFE NS-B1 3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
|
Atmel Corp. Atmel, Corp.
|
AT68166FT-YM17-E AT68166FT-YM25SV |
512K X 32 STANDARD SRAM, 17 ns, CQFP68 0.950 INCH, CERAMIC, QFP-68 512K X 32 STANDARD SRAM, 25 ns, CQFP68
|
Atmel, Corp. ATMEL CORP
|
P4C1048L-70CWI P4C1048L-45PMB P4C1048L-45SMB P4C10 |
LOW POWER 512K x 8 CMOS STATIC RAM 低功率为512k × 8的CMOS静态RAM LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, CDIP32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32 LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, CDIP32
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
UPD444008 UPD444008LE-12 UPD444008LE-10 UPD444008L |
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
|
NEC Corp.
|
AS5C4008EC-35LE883C AS5C4008ECJ-25LE883C AS5C4008E |
512K X 8 STANDARD SRAM, 35 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 25 ns, CDSO32 CERAMIC, SOJ-32 512K X 8 STANDARD SRAM, 35 ns, CDSO32 CERAMIC, SOJ-32 512K X 8 STANDARD SRAM, 25 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 512K X 8 STANDARD SRAM, 25 ns, CDFP32 CERAMIC, FP-32 512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, FP-32 512K X 8 STANDARD SRAM, 20 ns, CDFP32 CERAMIC, FP-32
|
Austin Semiconductor, Inc Micross Components AUSTIN SEMICONDUCTOR INC
|
AS7C33512PFD18A-133TQCN AS7C33512PFD18A-133TQIN AS |
3.3V 512K x 18 pipeline burst synchronous SRAM 512K X 18 STANDARD SRAM, 4.5 ns, PQFP100 3.3V 512K x 18 pipeline burst synchronous SRAM 512K X 18 STANDARD SRAM, 4 ns, PQFP100
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corp...
|
CY7C1049B-15VXC CY7C1049B-15VXI |
512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Cypress Semiconductor, Corp.
|
|